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    Home/    Category/    FET, MOSFET/    PHKD13N03LT,518

    MOSFET 2N-CH 30V 10.4A 8SOIC PHKD13N03LT,518

    PHKD13N03LT,518 image
    The pictures are for reference only
    Brand:
    Nexperia
    Model:
    PHKD13N03LT,518
    Description:
    MOSFET 2N-CH 30V 10.4A 8SOIC
    Stock:
    26140
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    10.4A
  • Drain source voltage (Vdss)
    30V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    10.7nC @ 5V
  • Input capacitance at different Vds (Ciss) (maximum)
    752pF @ 15V
  • On resistance (maximum) for different Ids and Vgs
    20 mΩ @ 8A,10V
  • Power - maximum
    3.57W
  • Vgs (th) (maximum) for different Ids
    2V @ 250µA
  • packing
    TR
  • series
    TrenchMOS™
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    PHKD13N03LT,518（FET, MOSFET）ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26140,Price reference "real-time change" China/Hongkong。 PHKD13N03LT,518 package/specs, Download PHKD13N03LT,518、Datasheet。
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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